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20V, 6.0A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and curre.
Dual N-Channel Enhancement Mode Field Effect Transistor
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